10G DFB LASER DIODE CHIP & TO
AST’s 10G DFB laser diodes are AlInGaAs directly modulated single mode edge-emitting DFB laser diode chip for use in uncooled applications up to 10.7Gb/sec.
The laser design is ridge structure with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. It enables high speed modulation by short cavity design.
All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.
Provides different type of 10G DFB laser chips/TO for various application: